For example, the combination of silver and silicon has shown promising properties for energy conversion. 5–7 Depositing the metal on semiconducting substrates is of particular interest since it allows for additional control of the electronic properties of the resulting systems. 4 Controlling the deposition process at the molecular level has always been of great interest. The process of depositing silver has been studied for many decades because of a variety of applications in fields such as catalysis, 1,2 energy storage, 3 and sensing. This result suggests that chemical vapor deposition can be used to deposit silver in a very controlled manner onto a variety of substrates using different topography methods and that the post-treatment with oxygen plasma is effective in preparing materials deposited for potential practical applications. The fluorine-containing ligands were completely removed. Particle agglomeration was observed on the surfaces, and the deposited metallic silver was oxidized to Ag 2O following plasma treatment. A combination of microscopic and spectroscopic techniques including electron microscopy and x-ray photoelectron spectroscopy was used to confirm the change in the morphology of the deposited material consistent with Ostwald ripening as a result of plasma treatment. Following the deposition, oxygen plasma was used to remove the remaining organic ligands on a surface and to investigate its effect on the morphology of chemically deposited silver nanoparticles and films. A silicon wafer was used as a model flat surface, and water-predosed ZnO nanopowder was investigated to expand the findings to a common substrate material for possible practical applications.

Silver deposition precursor molecule trimethylphosphine(hexafluoroacetylacetonato)silver(I) was used to deposit silver onto water-modified (hydroxyl-terminated) solid substrates.

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